摘要
Undoped and 1 at.% Co-doped ZnO nanostructure based UV photodetectors were successfully fabricated by RF- magnetron sputtering technique with comb like Pt electrodes. Cobalt ions were successfully incorporated into the lattice of the ZnO nanostructure without changing its wurtzite structure. It was indicated that Co-doping can effectively adjust the luminescence properties of the ZnO nanostructure. The undoped and Co-doped ZnO photodetectors were observed to have photosensitivities of 1.44 x 104 % and 8.57 x 102 % and low dark currents of 9.74 x 10-8 A and 1.18 x 10-7 A, respectively.
Undoped and 1 at.% Co-doped ZnO nanostructure based UV photodetectors were successfully fabricated by RF- magnetron sputtering technique with comb like Pt electrodes. Cobalt ions were successfully incorporated into the lattice of the ZnO nanostructure without changing its wurtzite structure. It was indicated that Co-doping can effectively adjust the luminescence properties of the ZnO nanostructure. The undoped and Co-doped ZnO photodetectors were observed to have photosensitivities of 1.44 x 104 % and 8.57 x 102 % and low dark currents of 9.74 x 10-8 A and 1.18 x 10-7 A, respectively.
