摘要
为了对比激光对CCD、CMOS两种图像传感器的干扰效果,利用1.06 μm高重频激光开展了对CCD、CMOS两种相机的饱和干扰实验研究,分析了两种相机在干扰有效面积、饱和干扰面积、干扰前后图像相关度等与激光入射功率之间的关系.实验结果表明：CMOS相机达到单元像素饱和的激光功率阈值是CCD相机的20倍;要达到相同的干扰有效面积,所需的激光功率CMOS相机要大于CCD相机10倍～100倍;要达到相同的饱和像元数,所需的激光功率CMOS相机比CCD相机约大10倍～60倍.因此,CMOS相机要比CCD相机具有更好的抗1.06 μm激光干扰能力.
To compare the jamming effect of laser on chargedcoupled device （CCD） and comple mentary metaloxide semiconductor （CMOS） imagers, jamming experiments with the wave length of the 1.06μm highrepetitionrate laser were conducted. The relationships of the two cameras＇ laser incident power with the jamming effective area, saturated pixel number and the imaging correlation were analyzed individually. The experiment results show that the laser power threshold of one pixel saturation of CMOS camera is 20 times than CCD camera in order to reach the same jamming effective area, the laser power of CMOS camera is 10- 100 times higher than the CCD camera and to reach the same saturation pixel, the laser power of CMOS camera is 10-60 times higher than the CCD than CCD camera on the antijamming of the camera. Therefore, the CMOS camera is better 1.06μm laser.
出处
《应用光学》
CAS
CSCD
北大核心
2014年第1期163-167,共5页
Journal of Applied Optics
基金
总装备部重大项目
