摘要
通过各种材料的试验和压机设备因素的测定,总结了金刚石生长过程的特性:金刚石晶体是在石墨(G)-触媒(Me)界面上生长;因电阻T_(G)>R_(Me)、温度T_(G)>T_(Me)以及与外界热交换等原因,使合成腔内产生压力、温度梯度,成为金刚石生长之驱动力。梯度过大过小对金刚石生长均不利;金刚石晶体在G-Me界面两侧是非对称性生长;每个晶粒表面有一特殊结构约20μm左右厚的金属薄膜,它起到运载碳源和催化的双重作用。要合成粗粒高强金刚石,需要有一个稳定的合成体系。本文分析了该体系状态的性质及稳定的必要性与稳定的具体方法。
After studing various material behavior in the diamond synthesis processes and by measuring the factors in the HP/HT apparatus, we summerized the characteristics of diamond growth as follows :diamond grows on the graphite (G)-metal catalyst (Me) material interfaces. Since the rasistance R(G)>R(Me),temperature T(G)>T(Me) and the heat exchange with outside,et al. ,the pressure and temperature gradients thus created in the cell will become the driving force of diamond growth. Too large or too small a driving force will be harmful to diamond growth. On the surface of each diamond crystal grain,there is a thin metallic layer of thickness about 15 -20μm. This metalic thin film can both act as the carbon carrier as well as the catalyst. The growth of a coarse grain of high-strength diamond requires a stable synthesis system. The paper analysed the property of such a system and proposed a way to establish the system.
出处
《高压物理学报》
CAS
CSCD
北大核心
1991年第3期227-232,共6页
Chinese Journal of High Pressure Physics
关键词
金刚石
生长特性
体系状态
合成
diamond,growth characteristic,stable system.
