摘要
文章采用介电常数低的纳米SiO2粉体与SiC微粉通过机械球磨的方式进行混合,制得SiO2包覆SiC的复合粉体,经干压成型,在流动的高纯氩气保护下,常压烧结出结构均匀、介电性能良好的SiC/SiO2复合材料。通过EDS、XRD、SEM等手段进行表征,分析了原料配比、烧结温度、密度及显微结构等对材料介电性能的影响。结果表明:烧结温度低于1 000℃时,随着温度升高,材料的烧结密度降低,介电常数降低;温度高于1 000℃时,材料的密度和介电常数随温度升高而增加,介电损耗则随温度升高一直呈递减趋势;当烧结温度为1 100℃时,SiC与SiO2质量比为2∶1的试样获得了烧结密度为1.77g/cm3、介电常数为5.40和介电损耗为0.055的较好性能。
Using low dielectric constant silica nano-powder and SiC powder as raw materials, SiO2-coa- ted SiC composite powders were produced by mechanical milling. After dry pressing and pressureless sintering in Ar atmosphere, SiC/SiO2 composites were made which show a homogeneous microstruc- ture and good dielectric properties. The composites were characterized by EDS, XRD and SEM meth- ods. The effects of mass ratio of raw materials, sintering temperature, density and mierostructure on the dielectric properties of the composites were analyzed. The results showed that the density and die- lectric constant of the composites decreased with the increase of sintering temperature under 1 000 ℃. When the sintering temperature was above 1000℃, the density and dielectric constant increased gradually. With the increasing temperature, the dielectric loss value decreased continually. The com- posite with combined good properties was obtained when the SiC/SiO2 mass ratio was 2 ： 1 and the sintering temperature was 1 100 ℃. The achieved sintering density was 1.77 g/cm3 , the dielectric con- stant was 5.4 and the dielectric loss was 0. 055.
出处
《合肥工业大学学报（自然科学版）》
CAS
CSCD
北大核心
2014年第1期38-41,86,共5页
Journal of Hefei University of Technology：Natural Science
基金
教育部博士后基金资助项目(20080430758)
