期刊文献+

酸性环境中基于Ta_2O_5的场效应管pH传感器的研究 被引量:2

Research on Ta_2O_5-based field-effect-transistor pH sensor in acidic environment
在线阅读 下载PDF
导出
摘要 研制了一种基于Ta2O5敏感膜的场效应式pH传感器,此传感器对pH有较好的敏感性:pH为1—7的范围内呈现出-57.4mV/pH的响应,漂移性约为3mV,迟滞效应小于5mV,且无明显酸误差。对此传感器的电化学阻抗谱进行深入研究,并采用不同的等效电路来拟合此Si/SiO2/Ta2O5/电解液体系的响应机理,得出最佳的等效电路模型为RC(CR)(C(RW))。对拟合参数进行分析,此Ta2O5敏感膜与不同pH的电解液接触时,敏感膜与电解液的界面作用最终会引起半导体硅中空间电荷的变化,进而引起整个传感器结构的电容变化。制作的pH传感器稳定性好,适合于生物冶金过程(pH为1-4)的长时间连续监测。 In this study,an amorphous Ta2O5-based field-effect-transistor pH sensor is developed. This sensor has good pH sensitivity at pH value range of 1 - 7 with a nearly Nerstain response ( -57.4 mV/pH), small drift ( 〈3 mV),small hysteresis( 〈5 mV)and unnoticeable acid error. Different equivalent circuits are adopted to fit response mechanism of Si/SiO/ Ta2O5 electrolyte system, and the optimal equivalent circuit model is RC(CR) ( C (RW)). Analyze on fitting parameters, it shows that while Ta2O5film contacts with different pH electrolyte, action of sensing film and electrolyte interface will eventually lead to change of the space charge in semiconductor silicon, causing capacitance change of whole sensor structure. This sensor has good stablility and it is suitable for continuous long time monitoring of biological metallurgy process, at pH value range of 1-4.
出处 《传感器与微系统》 CSCD 北大核心 2014年第1期26-30,34,共6页 Transducer and Microsystem Technologies
基金 国家科技支撑计划资助项目(2012BAK08B05) 上海市创新行动计划资助项目(201101042 11CH-15 11530700800 11391901900)
关键词 TA2O5 PH传感器 电化学阻抗谱 原子力显微镜 等效电路模型 Ta2O5 pH sensor electrochemical impedance spectroscopy AFM equivalent circuit models
  • 相关文献

参考文献29

  • 1Haber F,Klemensiewicz Z. Concerning electrical phase boundary forces[M].Place Published:Akademische Verlagsgellsch Geest & Portig,Leipzig,Germany,1909.385-431.
  • 2Heineman W R,Wieck H J,Yacynych A M. Polymer film chemically modified electrode as a potentiometric sensor[J].{H}Analytical Chemistry,1980,(02):345-346.
  • 3Pankaj K,Kumar S H,Sukhjeet K. Conducting polymer based potentiometric sensors[J].Research Journal of Chemistry and Environment,2012,(03):125-133.
  • 4Glab S,Hulanicki A,Edwall G. Metal-metal oxide and metal oxide electrodes as pH sensors[J].{H}Critical Reviews in Analytical Chemistry,1989,(01):29-47.
  • 5Kurzweil P. Metal oxides and ion-exchanging surfaces as pH sensors in liquids:State-of-the-art and outlook[J].{H}SENSORS,2009,(06):4955-4985.
  • 6Huang W D,Cao H,Deb S. A flexible pH sensor based on the iridium oxide sensing film[J].{H}Sensors and Actuators A-physical,2011,(01):1-11.
  • 7Matsuo T,Esashi M,Abe H. pH ISFETs using Al2O3,Si3N4,and SiO2 gate thin-films[J].{H}IEEE Transactions on Electron Devices,1979,(11):1856-1857.
  • 8Alegret S,Bartrolí J,Jiménez C. pH-ISFET with NMOS technology[J].{H}ELECTROANALYSIS,1991,(4-5):355-360.
  • 9Middelhoek S. Celebration of the tenth transducers conference:The past,present and future of transducer research and development[J].{H}Sensors and Actuators A-physical,2000,(1-3):2-23.
  • 10Bergveld P. Thirty years of ISFETOLOGY-What happened in the past 30 years and what may happen in the next 30 years[J].{H}Sensors and Actuators B-Chemical,2003,(01):1-20.

同被引文献8

引证文献2

二级引证文献18

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部