摘要
为减少通常锗硅混晶太阳电池的异质界面复合及窄能隙引入的体内复合增强 ,提出了一种新型结构锗硅混晶太阳电池模型。对反映电池内光生少子运动的参数及物理过程分析后得出该模型少子连续方程。计算结果表明 ,该电池模型 ,在优化条件下既能减少高浓度锗导致的复合增强 ,又能拓宽长波光谱响应。计算预测的最佳转换效率为 17.2 %
For decreasing recombination on heterojunction interface of Si/Si 1-x Ge x heterostructure solar cell and in bulk caused by narrow bandgap the novel Si/Si 1-x Ge x heterostructure solar cell has been produced.The continuity equations of photogenerated carrier have been derived after analyzing the carriers kinetics parameter and physical process.Calculations show that under the circumstance of optimization cell structure the enhancing recombination caused by high concentration Ge has been diminished and that spectrum for long wave spectral absorption also has been widened.The best conversion efficiency is predicted by 17.2%.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2000年第4期410-416,共7页
Acta Energiae Solaris Sinica
关键词
锗硅混晶
异质结
太阳电池
SiGe mixed crystal
heterojunction
solar cell
