摘要
利用固体与分子经验电子理论（ＥＥＴ理论）计算了ＰｔＳｉ的价电子结构，并利用Ｘ射线光电子谱（ＸＰＳ）分析了ＰｔＳｉ薄膜中阶电子的能谱．结果表明，Ｐｔ和Ｓｉ化合形成ＰｔＳｉ以后，Ｓｉ和Ｐｔ的杂阶均向较低杂阶方向移动，化合物中含有较高密度的晶格电子，使ＰｔＳｉ具有良好的导电性．Ｘ射线光电子谱测试结果表明，ＰｔＳｉ中价电子的能谱向高结合能方向移动，Ｐｔ的５ｄ电子是化合物中重要的成健电子．
PtSi valence electronic structure was calculated by ' The Empirical Electron Theory of Solid and Molecules' (EET) and the valence electronic energy state in the PtSi films were analyzed using X-ray Photoelectron Spectroscopy (XPS). The results showed that the hybridization levels σ of Pt and Si in PtSi removed to lower ones respectively, from 11 to 5 for Pt, and from 4 to 3 for Si, and the average number n1 of lattice electron changed from 1.2796 to 1.8030. There are higher densities of lattice electrons in the PtSi films, which can be speculated that PtSi possesses excellent conductivity. The results of XPS revealed that the valence electronic energy spectrum shift to higher binding energy obviously and Pt5d electrons are the most important bonding electrons in the PtSi compound.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2000年第6期643-646,共4页
Chinese Journal of Materials Research
