摘要
通过γ辐照和电流加速老化的方法研究环形、旋转形、中心环绕形、树形等4种电极芯片的抗辐射性能.结果表明:与环形电极相比,3种新型电极的抗辐射性能较好;随着辐照剂量的增加,环形电极的工作电压明显高于3种新型电极,而且辐照后环形电极的主波长和峰值波长红移现象明显,光通量和发光效率衰减更加明显;老化实验得知γ辐照后新型电极的寿命优于环形电极;通过对发光二极管(LED)芯片的电极进行优化,不仅可以减少电流的拥挤效应,而且可提升芯片的抗辐射性能,延长LED器件的使用寿命.
In this paper, the experimental method of gamma radiation and current accelerating aging is used to study the anti-radiation performance and the change of the chip life after irradiation for 4 kinds of electrodes, that is, annular type, the rotary type, the center around type and the tree type. The results indicate that the anti-radiation performance of three new electrodes is much better than that of the annular one, as the working voltage of the annular electrode is obviously higher than that of the three electrodes with the increase of irradiation dose. After irradiation both the redshift of the dominant wavelength and the peak wavelength of the annular electrode become more obvious, and the luminous flux and the luminous efficiency decay more quickly. After gamma radiation, the aging tests show that the lifetime of the new electrodes is significantly longer than that of the annular electrode. Those results show that the optimization of the electrode of the LED chip can not only decrease the current crowding effects of the chip, but also promote the anti-radiation per- formance of the chip with a longer lifetime.
出处
《扬州大学学报（自然科学版）》
CAS
北大核心
2013年第4期26-30,共5页
Journal of Yangzhou University：Natural Science Edition
基金
江苏省科技厅工业高技术项目(BG2007026)
关键词
GAN基发光二极管
电极形状
Γ辐射
老化测试
GaN-based light-emitting diode
electrode shape
gamma radiation
ageing test
