摘要
以MUR8100PIN二极管为对象,研究了PIN二极管模型参数抽取的试验方法和试验手段。在小电压等级下,利用试验抽取的二极管模型参数建立其反向恢复模型,并用仿真软件Saber验证了模型的正确性。最后,分析了影响模型精度的近似条件和物理效应。
This paper studied the model parameter extraction methods and experimental means for the MUR8100 PIN diode as the research object. Under a low voltage level, with the parameters extracted by the experiment, reverse recovery model was built. The correctness is proved by simulation softwave Saber. Finally, approximation and physical effects concerned with model accuracy were analyzed.
出处
《低压电器》
2013年第10期30-33,47,共5页
Low Voltage Apparatus
基金
国家863项目(2011AA11A256)
