摘要
文内报告了金刚石薄膜 /立方氮化硼异质结的制备过程 ,然后采用自制的测试装置对其伏 安特性进行了测试。
In this thesis, preparation of diamond film/c BN hereo junction has been studied, then its V A characteristics has been measured by special made device.
出处
《原子与分子物理学报》
CAS
CSCD
北大核心
2000年第4期751-754,共4页
Journal of Atomic and Molecular Physics
关键词
金刚石薄膜
立方氦化硼单晶
异质结
半导体
Dianond film
c BN single crystal
Hereo junction
V A Characteristics
