摘要
利用北京同步辐射装置漫散射实验站的五圆衍射仪，建立了掠入射Ｘ射线衍射实验方法．对Ｓｉ表面生长的Ｇｅ／Ｓｉ量子点及其在Ｓｉ表层产生的应变进行了成功测量，表明此方法可以有效地提取表面层的微弱信号．实验结果表明，Ｇｅ／Ｓｉ量子点的形成除了在Ｓｉ衬底表层形成了晶格具有横向膨胀应变的区域之外，还在Ｓｉ衬底中形成了具有横向压缩应变的区域．
Synchrotron radiation X-ray grazing incident diffraction (GID) method was developed based on the five-circle diffractometer in the Diffuse Scattering Station at Beijing Synchrotron Radiation Facility. The lateral strain induced by the Ge/Si quantum dotswas measured successfully, which showed the capability of the GID method in measuring weak signals from surface structures. The results showed that the formation of Ge/Si quantum dots caused both the lateral expansion-strain and contraction-strain in the surface layer of Si(001) substrate.
出处
《高能物理与核物理》
EI
CSCD
北大核心
2000年第12期1185-1190,共6页
High Energy Physics and Nuclear Physics
基金
国家自然科学基金资助(19834050)
关键词
掠入射衍射
表层结构
量子点
微弱信号
grazing incident diffraction
surface structure
quantum dot
weak sigal
