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TGG法制备织构化K_(0.5)Na_(0.5)NbO_3无铅压电陶瓷的性能研究 被引量:2

Research on Properties of Textured K_(0.5)Na_(0.5)NbO_3 Lead-free Piezoelectric Ceramic Prepared by Template Grain Growth
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摘要 以熔盐法制备的K4Nb6O17片状粉体为前驱体,通过质子取代法制备了片状Nb2O5粉体,并且以其为模板结合模板晶粒生长(TGG)技术制备出较高织构度的K0.5Na0.5NbO3(KNN)织构化无铅压电陶瓷,研究了不同工艺参数(模板含量、烧结温度和保温时间)对KNN织构化陶瓷的显微结构、介电性能以及压电性能的影响规律。研究结果表明:当模板含量、烧成温度和保温时间分别为10wt%,1120℃和5 h时,可以获得织构度f为0.78的KNN织构化无铅压电陶瓷,并具有优异的压电和介电性能:平行于流延方向压电常数d33=141 pC/N,介电常数εT33/ε0=503和平面机电耦合系数k p=39.7%;垂直于流延方向d33=112 pC/N,εT33/ε0=454和k p=37.5%。 The Nb2O5 plate-like particles were synthesized by proton replace method from the precursor particles K4Nb6017 which synthesized by molten salt method. The high orientation degrees potassium sodium niobate K0.5 Na0.5 NbO3 (KNN) textured ceramic were fabricated by tape casting process which used Nb2O5 plate-like powder as template particles. The influence of different process parameters which were template content, sintering temperature and soaking time on the microstructure, dielectric and piezoelectric properties of the ceramic was studied. The results showed that the optimized orientation degree f is 0.78, piezoelectric properties and dielectric properties of the textured ceramic could be obtained when the template content, sintering temperature and soaking time were 10wt%, 1120 ℃ and 5 h, respectively. On parallel tape-casting direction the piezoelectric constant d33 reaches 141 pC/N, dielectric constant εT33/ε0 is 503 and planar electromechanical coupling factor kp is 39.7%, and on perpendicular tape-casting direction the d33 112 pC/N, εT33/ε0 = 454 and kp = 37.5 %, respectively.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2013年第10期2043-2048,共6页 Journal of Synthetic Crystals
基金 国家自然科学基金(51262011 50962007) 江西省自然科学基金(20114BAB206023) 江西省主要学科学术和技术带头人培养计划(2010DD01100) 江西省教育厅科技项目(GJJ12508) 景德镇市学科带头人项目
关键词 铌酸钾钠 TGG法 织构化陶瓷 片状Nb2O5 模板 potassium sodium niobate TGG textured ceramic Nb2O5 plate-like particle
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  • 1李月明,陈文,徐庆,周静,廖梅松.(Na_(0.8)K_(0.2))_(0.5)Bi_(0.5)TiO_3陶瓷的介电压电性能[J].无机材料学报,2004,19(4):817-822. 被引量:8
  • 2肖定全.钙钛矿型无铅压电陶瓷研究进展及今后发展思考[J].人工晶体学报,2012,41(S1):58-67. 被引量:21
  • 3褚祥诚,高仁龙,郇宇,王晓慧,李龙土.Li、Sb、Ta共掺杂对铌酸钾钠基无铅压电陶瓷相结构和压电性能的影响[J].稀有金属材料与工程,2013,42(S1):130-134. 被引量:5
  • 4陈文,李月明,周静,徐庆,王燕,孙华君,徐任信.(1-3x)NBT-2xKBT-xBT系无铅压电陶瓷性能研究R&D[J].电子元件与材料,2004,23(11):24-27. 被引量:18
  • 5刘志,李月明,沈宗洋,等.一种片状五氧化二铌的制备方法[P]_CN.201110408036. X,2012~06-28.
  • 6Panda P K. Review: Environmental Friendly Lead-free Piezoelectric Materials[J] .J. Maler. Sci. ,2009 .44( 19) :5049-5062.
  • 7Shen Z Y Xiao Z G , Li Y M , et al. Enhanced Piezoelectric Properties of ( Na0.535 K0.485 ) 0.905 Li0.095 ( Nb0.94Ta0.06 )O3 -( Na0.5 Bi0.5) TiO3 Lead-Free Piezoelectric Ceramics in the MPB Composition[ J]. Key Eng. Mater,2012, (512-515) :1390-1394.
  • 8Wang C M and Wang J F. High Performance Aurivillius Phase Sodium-potsssium Bismuth Titanate Lead-free Piezoelectric Ceramics with Lithium and Cerium Modification[J].Appl. Phys. Lett. ,2006,89(20) :202905-202907.
  • 9Gai Z G, Wang J F, Zhao M L, et al. High temperature (NaBi)0.'8.{). 04Bi2Nb209-based Piezoelectric Ceramics[J]. Appl. Phys. Lett. ,2006,89 (1): 2907-2909.
  • 10Kimura T, Takahashi T, Tani T, et al. Crystallographic Texture Development in Bismuth Sodium Titanate Prepared by Reactive-templated Grain Growth Method[J]. J. Am. Ceram. Soc. ,2004 ,87(8) : 1424-1429.

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