摘要
本文测定了钾薄膜中能量为65、256和921eV的俄歇电子的非弹性平均自由程(IMFP)。在室温下,钾蒸气在清洁的铜单晶(100)表面只沉积成单原子层的薄膜;当温度低至-173℃～-123℃时可沉积成多原子层薄膜,且薄膜是按原子层逐层沉积而成。根据薄膜中所包含的原子层的层数可以计算出薄膜的厚度。铜衬底的俄歇信号和沉积层的俄歇信号均可用于计算钾薄膜中俄歇电子的IMFP,其结果为0.64nm(65eV)、1.01nm(256ev)和2.20nm(921eV)。
The inelastic mean free paths (IMFP) of 65, 256 and 921 eV Auger electrons in thin films of potassium have been determined. Monolayer deposition was observed when the potassium was deposited on a monocrystalline (100) copper surface at room temperature. In the temperature range between-173℃ and-123℃ potassium grew in a layer-by-layer fashion. The thickness of the potassium films can be estimated according to the number of layers involved in the films. Both substrate Auger signal and deposition layer Auger signal are used to calculate the inelastic mean free paths of Auger alectrons in potassium, and they are 0.64nm for 65 eV, 1.01nm for 256 eV and 2.20nm for 921 eV.
出处
《分析试验室》
CAS
CSCD
北大核心
1991年第1期6-10,共5页
Chinese Journal of Analysis Laboratory
关键词
钾
薄膜
俄歇电子
IMFP
表面分析
Thin film of potassium, Auger electrons, Inelastic mean free path
