摘要
用三辛基氧膦(TOPO)化学修饰钨电极预富集-石墨炉原子吸收法测定镓。在5.0×10^(-2)mol/L HAc 底液中,Ga(Ⅲ)被络合富集于 TOPO-钨修饰电极表面,测定线性范围7.17×10^(-10)～1.43×10^(-7)mol/L,检测下限1.43×10^(-10)mol/L,相对标准偏差5.5%。用于人发和水样分析,结果满意。
A coiled tungsten wire electrode was modified with film of trioctylphosphine oxide(TOPO).In 5×10^(-2)mol/L HAc medium,trace amount of Ga(Ⅲ)in sample was pre- concentrated onto the electrode,and then put it into a graphite cup to take atomic absorp- tion spectrometric measurement.The linear range of determination is 7.17×10^(-10)～1.43× 10^(-7)mol/L,and the detection limit is 1.43×10^(-10)mol/L.Eleven determinations of a solu- tion containing 2.86×10^(-8)mol/L of Ga(Ⅲ)give relative standard deviation of 5.5%.The satisfactory result was obtained for the determination of Ga(Ⅲ)in water and biological samples.
出处
《分析化学》
SCIE
EI
CAS
CSCD
北大核心
1991年第11期1298-1300,共3页
Chinese Journal of Analytical Chemistry
关键词
镓
原子吸收法
化学修饰电极
测定
Trioctylphosphine oxide modified electrode
Electrochemical preconcentration
Gallium
Atomic absorption spectrometry
