期刊文献+

退火温度对LaNiO3薄膜组织结构及电阻率的影响

Effect of Annealing Temperature on Structure and Resistivity of LaNiO_3 Film
在线阅读 下载PDF
导出
摘要 采用射频磁控溅射法在Si(111)上制备出LaNiO3薄膜,并通过XRD、SEM等进行表征。结果表眀,LaNiO3薄膜在未退火状态下出现一定的择优取向,在空气中随着退火温度的增加,结晶性更好,出现钙钛矿型结构;900℃退火时出现杂相,LaNiO3发生分解导致薄膜表面形貌发生巨大变化。电阻率与结构中的氧空位有密切联系,退火温度增加,氧空位减少,电阻率减小。在700℃退火时可以得到1.59Ω·cm的最小电阻率。 LaNiO3 thin films were prepared on Si(111) with radio frequency magnetron sputtering (RFMS) method and characterized by XRD and SEM. The results show that a certain degree of preferred orientation appears in LaNiOa film under unannealed state. The higher the annealing temperature in air is, the better the film's crystallinity is, and perovskite type structure occurs. When the annealing temperature reaches 900 ℃, a hetero phase occurs, and the surface morphology changes dramatically due to decomposition of LaNiOa. The resistivity is closely linked with oxygen vacancies in the structure. The higher the annealing temperature is, the less the oxygen vacancies and the resistivity are. The minimum resistivity of 1.59 Ω · cm is obtained in film when annealed at 700 ℃.
出处 《有色金属(冶炼部分)》 CAS 北大核心 2013年第11期46-49,共4页 Nonferrous Metals(Extractive Metallurgy)
基金 国家自然科学基金资助项目(21063008)
关键词 LANIO3 薄膜 退火温度 显微组织 电阻率 LaNiOa film annealing temperature resistivity
  • 相关文献

参考文献10

  • 1Frauenheim T, Jungnickel G, Kohler T, et al. Struc- ture and electronic properties of amorphous carbon; from semimetallic to insulating hehaviour[J]. Journal of noncrystalline solids, 1995,182(1) : 186-197.
  • 2张洪伟,张树人,黄文,刘敬松,杨成韬.PZT/LaNiO_3/MgO多层结构制备及性能研究[J].压电与声光,2007,29(5):586-588. 被引量:4
  • 3张洪伟,张树人,黄文,刘劲松,杨成韬,杜善义.PZT/LaNiO_3/LaAlO_3结构制备及性能研究[J].压电与声光,2007,29(4):442-444. 被引量:2
  • 4张丛春,石金川,刘兴刚,杨春生.溅射工艺对LaNiO_3薄膜结构的影响[J].功能材料与器件学报,2008,14(1):215-217. 被引量:1
  • 5Sreedhar K, Honig J, Darwin M, et al. Electronic properties of the metallic perovskite LaNiO3 : Correlated behavior of 3d electrons[J]. Physical Review B, 1992,46 (10) :6382.
  • 6Choisnet J, Evarestov R, Tupitsyn I, et al. Investiga- tion of the chemical bonding in nickel mixed oxides from electronic structure calculations[J]. Journal of Physics and Chemistry of Solids, 1996,57 (12) : 1839-1850.
  • 7Stewart M, Yee C-H, Liu J, et al. Optical study of strained ultrathin films of strongly correlated LaNiO3 [J].Physical Review B,2011,83(7) :75125.
  • 8Sanchez R, Causa M, Caneiro A, et al. Metal-insulator transition in oxygen-deficient LaNiO3-xperovskites[J]. Physical review B, 1996,54(23) : 16574.
  • 9余东海,王成勇,成晓玲,宋月贤.磁控溅射镀膜技术的发展[J].真空,2009,46(2):19-25. 被引量:91
  • 10Demazea G, Plante T. High oxygen pressure: A new route to the stabilization of unusual oxidation states of transition elements[J]. High Pressure Research,1991, 7(1/2/3/4/5/6) :328-331.

二级参考文献68

共引文献93

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部