摘要
介绍分析了在蜂窝和个人通信业务 (PCS)市场中适用于 RFIC的多种射频晶体管技术。Ga As HBT技术被作为介绍的基线 ,并且与目前已有的技术进行比较 ,得出对于射频应用 ,Ga AsHBT综合了 Si BJT和 Ga As FET两者优点的结论。文中还介绍了近年来国外 Ga As HBT MMIC,PHEMT MMIC和 In P HBT MMIC的研究进展情况。
This review presents many RF transistor technologies for RFIC applications in cellular and personal communications service (PCS) markets.GaAs HBT technologies are mainly introduced and compared with existing technologies.It is concluded that the GaAs HBTs combine the good gualities of both Si BJT and GaAs FET for RF applications.The state of arts of GaAs HBT MMIC,PHEMT MMIC and InP HBT MMIC are alse reviewed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2000年第4期391-395,432,共6页
Research & Progress of SSE
