期刊文献+

底部真空负压浸渗工艺制备β-SiC_p/Al电子封装材料 被引量:2

β-SiC_p/Al Composites for Electronic Packaging Prepared by the Process of Bottom-Vacuum Negative Pressure Infiltration
在线阅读 下载PDF
导出
摘要 摘要:针对国内目前sic/A1在产业化中存在的诸多问题,选用W20和w60的β-SiC粉体,采用模压成型制备SiC预制体,并通过底部真空负压浸渗工艺制备了致密度为96%~98%、体积分数为55%~72%的β-SiCp/Al复合材料。XRD、SEM、CT和CTE测试分析表明:所制备的复合材料中存在MgAl20。尖晶石相,没有发现Al4C3脆性相;复合材料组织均匀,存在少量浸渗缺陷,孔洞较少;SiC体积分数为72%的复合材料在常温热度下的热膨胀系数为6.91×10-6/K,热导率为164.8W/(m·K),而sic体积分数为65%的复合材料的热膨胀系数为7.31×10-6/K,热导率为172.7W/(m.K)。 According to the problems existing in the industrialization of SiCp/Al in domestic currently, SiC preforms were prepared by compression molding with W20 and W60 B-SiC powders, respectively. The SiCp/Al composites with relative density of 96%-98% and volume fraction of 55%-72% were fabricated bybottom-vacuum negative pressure infiltration. The results of XRD, SEM, CT and CTE analysis indicate that Mgml204 spinel phase exists in the composites, but Al4C3 brittle phase is not clearly observed. Furthermore, the composites have homogeneous microstructure with fewer defects. The coefficient of thermal expansion with volume fraction of 72% SiC can reach 6.91 × 10^-6K-1 and the thermal conductivity is 164.8 W/(m. K) at the normal temperature, while the coefficient of thermal expansion of those with volume fraction of 65% SiC is 7.31 × 1 0^-6K-1 and the thermal conductivity is 172.7 W/(m-K).
出处 《铸造》 CAS CSCD 北大核心 2013年第10期953-957,共5页 Foundry
基金 国家自然科学基金资助项目(51074123) 陕西省科学技术研究发展计划项目(2010TG-02) 西安科技大学博士培育基金项目(2012QDJ034)
关键词 无压浸渗 β-SiCp AL复合材料 热膨胀系数 热导率 pressureless infiltration [3-SiCP/A1 composites coefficient of thermal expansion thermalconductivity
  • 相关文献

参考文献19

  • 1Hu M, Ma J,Gao J,et al. The Research of spraying SiC/ (Al, Cu)electronic packaging composite materials [J]. Advanced ScienceLetters, 2012, 15 (1): 461-464.
  • 2Thermol Transfer Composites. Cool products for hot applications[EB/OL]. [2012-12-12]. http: //www.thermaltc.com/products.html.
  • 3CPS technologies. Reliability with smart composite products [EB/OL].[2012-12-12]. http: "www.alsic.com/index.html.
  • 4Miqam Microelectronics Materials Co.,Ltd AlSiC for IGBT baseplate[EB/OL]. [2012-12-12]. http: "www.al-sic.com/AlSiC_IGBT_Base-plate.htm.
  • 5冯号,于家康,薛晨,马明辉.电子封装用金刚石/铝复合材料的显微组织与热膨胀性能[J].热加工工艺,2010,39(14):59-62. 被引量:9
  • 6Liu Z Y, Kent D, Schaffer G B. Powder injection moulding of anA1-A1N metal matrix composite [J]. Materials Science andEngineering A, 2009, 513-514: 352-356.
  • 7Wang J H, Yi D Q, Su X P, et al. Properties of submicron AINparticulate reinforced aluminum matrix composite [J]. Materials &Design, 2009, 30 (1): 78-81.
  • 8Sulardjaka, Jamasri, Wildan W M, et al. Method for increasingP-SiC yield on solid state reaction of coal fly ash and activated carbonpowder [J]. Bulletin of Materials Science, 2011, 34 (4): 1013-1016.
  • 9Feng G Y,Fang X Y, Wang J J, et al. Effect of heavily dopingwith boron on electronic structures and optical properties of p-SiC [J].PhysicaB, 2010,405 (12): 2625-2631.
  • 10褚克,贾成厂,梁雪冰,曲选辉.注射成形与压力熔渗方法制备高体积分数SiC_P/Al封装盒体及其导热性能分析[J].粉末冶金技术,2007,25(5):348-351. 被引量:8

二级参考文献57

共引文献95

同被引文献58

引证文献2

二级引证文献51

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部