摘要
针对制备NiTi合金薄膜中原子个数比难于控制的问题,探讨了一种工艺方法制备薄膜.该工艺运用射频磁控溅射法,采用倾斜的固定的纯Ni和纯Ti的单质靶材同时溅射,同时基底自转的方法,以保证整个薄膜在制备过程中Ni原子、Ti原子在基底上均匀分布,并可以很好的控制各原子的溅射功率.研究不同基底温度和不同溅射功率下制备出的薄膜成分及表面形貌的变化.得到了基底温度和溅射功率比值对成分及薄膜成岛方式的影响规律.实验表明:随着基底温度的升高,薄膜中岛的尺寸增加,数量减少;Ti靶与Ni靶材功率比值为3.7时,制备出的薄膜最接近等原子比.
Radio frequency （RF） magnetron sputtering has been adopted as a new method for conducing research, aiming at solving the problem of how to control the number of Ni and Ti atoms during the preparation of NiTi alloy thin film. In this new preparation technology, we have chosen the pure Ni and Ti as the target materials, which are tilted and fixed and sputter simultaneously, at the same time the substrate rotates on its axis, This new technique can ensure the Ni and Ti atoms distributed evenly and control the ratio of the two atoms easily. The main objective of this paper is to investigate the rule of film atomic composition and surface morphology with different temperatures of the substrate and different sputtering powers at the initial stage of the film growth. The rule of substrate tempera- ture and sputtering power ratio influencing composition and island forming pattern of the film was obtained. The ex- periments show that as the substrate temperature increases, the size of the island increases and the amount decrea- ses. The two types of atoms can be near equal when the sputtering power ratio of Ni and Ti targets is 3.7.
出处
《哈尔滨工程大学学报》
EI
CAS
CSCD
北大核心
2013年第7期929-932,共4页
Journal of Harbin Engineering University
基金
中央高校基本科研业务费专项资金资助项目(DUT10LK42)
国家自然科学基金资助项目(11272072)
关键词
NITI合金
薄膜
基底
形貌
NiTi alloys
thin film
substrate
morphology
