摘要
本文介绍用MOS场效应管,电容和运算放大器构成的全集成有源元件,包括GIC、模拟电感和频变负阻(FDNR)等元件电路。这些元件以双运算放大器的Riordan电路为基础,并使用四个匹配晶体管组达到特性的线性化。结果将导致以这类元件为基本单元的新型全集成MOS FET-C连续时间滤波器的诞生。
The paper describes a new class of fully integrated active elements obtained by means of MOS transistors, MOS capacitors and MOS op-amps. These new elements include GIC, inductance simulation and FDNR. The constructions are based on Riordan prototype circuit and the linear characters are achieved by using four matched MOSFET's versions. Consequently, the novel fully integrated MOS-FET-C continuous-time filters are produced.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1991年第6期102-105,共4页
Acta Electronica Sinica
