摘要
本文报道用电子束蒸发法将过渡金属Co掺入a-Si薄膜,用电导率与温度的依赖关系,ESR紫外透射谱测量手段对a-Si:Co薄膜的电学、光学特性,杂质对缺陷态的补偿和掺杂机理进行了研究。测量结果表明,Co杂质能级的中心位置在价带E_v以上0.13eV.在480K<T<290K的温度范围内,电导率由两种导电机制组成:在480K<T<330K,是以价带扩展态中的空穴导电为主,在330K<T<290K,是以Co杂质能级的跳跃导电为主。
Amorphous silicon films doped with transition metal Co were prepared by electron beam evaporation. The electrical and optical properties, the impurity effect on the defects in the films and the doping mechanism are studied using temperature dependence of conductivity, ESR technique and ultraviolet absorption. The impurity level lies about 0.13 eV above valence band EV At 480<T<290K, an analysis of conductivity data allows to reveal two conduction mechanisms: 1) at 480<T<330K, σ is due to conduction of holes in valence band. 2) at 330<T<290K, it is due to hoping conduction through an impurity band.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1991年第5期111-113,共3页
Acta Electronica Sinica
