摘要
本文根据传热学理论分析了内含缺陷的复合材料的表面温差.给出了键合硅片表面温差与缺陷深度、厚度及加热时间之间关系的计算结果.介绍了利用红外热象仪检测材料内脱粘的方法.
In The paper , surface temperature of specimen consisted of complex material contained flaw on theory of heat transfer are calculated . The computation resultes that surface temperature difference of bonding on silicon wafers versus different depth of defect and heating time arc given . The methods for testing delamination in complex material are introduced.
出处
《电子器件》
CAS
1991年第2期56-62,共7页
Chinese Journal of Electron Devices
