摘要
在高温下Cl2+H2体系可促使SiC转化为金刚石。论文从热力学角度分析了Cl2选择性刻蚀SiC制备金刚石时,Cl2和H2对sp2、sp3杂化形式的C-C键的作用机制,从理论上推导了SiC转化为金刚石的气源中Cl2、H2比例范围。建立了SiC结构向金刚石结构转变时形成金刚石团簇的理论模型,根据该模型解释了SCDD膜的增厚机制。
The gas mixture with chlorine and hydrogen can lead to a conversion of silicon carbide to diamond at high temperature. The effect of the chlorine and hydrogen on spE-bonded and sp3-bonded carbon in silicon carbide derived diamond process was discussed by thermodynamics. The ratio of C12/H2 in the reaction gas was determined. A theoretical transformation model describing SiC structure to diamond structure was established to explain the thickening mechanism of SCDD coatings.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第8期1537-1542,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(51075211
51275230)
教育部博士点基金项目(20113218110018)
江苏省高校优势学科建设工程资助项目
关键词
金刚石
碳化硅
氯气
热力学
选择性刻蚀
diamond
silicon carbide
chlorine
thermodynamics
selective etching
