摘要
碳化硅 (Si C)是一种宽禁带半导体材料 ,适用于制作高压、高功率和高温器件 ,并可工作在从直流到微波频率范围。文章阐述了 Si C材料的性质 ,详细介绍了 Si C器件工艺 (掺杂、刻蚀、氧化及金属半导体接触 )的最新进展 ,并指出了存在的问题及发展趋势。
WT 5”BZ] Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-vol tage, high-power and high-temperature device operating from DC to microwave frequencies. Recent achievements in the research of SiC materials are reviewed , and some remaining obstacles in SiC device technology, such as doping, etc hing, oxidation and metal-semiconductor contacts, etc. are discussed in deta il.
出处
《微电子学》
CAS
CSCD
北大核心
2000年第6期422-425,共4页
Microelectronics
