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电脉冲作用下硅黄铜再结晶退火的工艺研究

Study on Recrystallization Annealing Process of Silicon Brass under Electro Pulse Modification
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摘要 采用电脉冲处理辅助再结晶退火工艺对热挤和冷拔后的HSi65%~1.5%硅黄铜进行处理,利用变形硅黄铜合金回复和再结晶后显微组织中β相和洛氏硬度值变化对再结晶退火温度和电脉冲处理时间的影响进行了对比分析,确定了变形后HSi65%~1.5%硅黄铜在电脉冲作用下再结晶处理的最优参数。结果表明,在硅黄铜再结晶退火过程中施加电脉冲可有效的缩短再结晶退火时间,降低再结晶退火温度。随着脉冲处理温度的提高及电脉冲处理时间的增加,完成再结晶所需时间缩短。当再结晶退火温度为300℃、脉冲电压为700 V、脉冲频率为15 Hz、脉冲处理时间为120 s时合金的再结晶回复效果最佳。 A recrystallization annealing process with electric pulse modification (EP, EPM) aided was carded out to treat the HSi65%-1.5% silicon brass of the hot-extrusion and cold-drawing, and the effects of recrystallization annealing temperature and the time of EP treatment were compared with the original sample by the β phase and the variations of Rockwell hardness value, and the optimization parameter of recrystallization annealing process of the deformation HSi65%-1.5% silicon brass by EP was confirmed. The result expatiates that the time of recrystallization annealing process is shortened and the temperature of recrystallization annealing process is reduced during recrystallization annealing process of the deformation HSi65%-1.5% silicon brass by EP. With the recrystallization annealing temperature improving and the time of EP treatment increasing, the complete time of recrystallization is shortened. When the recrystallization annealing temperature is 300 ℃ the time of EP treatment is 120 s, the recrystallization annealing process is optimal.
出处 《辽宁工业大学学报(自然科学版)》 2013年第4期246-250,共5页 Journal of Liaoning University of Technology(Natural Science Edition)
基金 国家自然科学基金资助项目(51074087) 辽宁省自然科学基金资助项目(201102088) 辽宁省百千万人才工程资助项目(2010921096) 辽宁省高等学校杰出青年学者成长计划项目(LJQ2011065)
关键词 硅黄铜 电脉冲 再结晶退火 silicon brass electric pulse modification recrystallization annealing
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