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标准Ge-on-SOI工艺全差分光电探测器(本期优秀论文)

Fully differential photodetector based on standard Ge-on-SOI process
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摘要 基于IME标准Ge-on-SOI工艺提出了一种全差分光电探测器结构,由定向耦合偏振分束器与锗垂直PIN光电探测器组成,可将一路由单模光纤输入的高速1550nm光信号转换为一对高速差分电信号。分析并设计了具体结构,进行了器件模拟,模拟得到定向耦合偏振分束器TE波与TM波的消光比分别为-16.7dB与-15.7dB,锗垂直PIN光电的响应度与带宽分别为0.42A/W与6.51GHz。 A novel fully differential photodetector based on standard Ge-on-SOI process is put forward. This photodetector consists of direction coupling polarization splitter and two vertical PIN Germanium photodetec- tor, which can convert one high speed 1550nm input optical signal to a pair of balanced high speed electrical output signal. The splitter and photodetector are analyzed and simulated. The extinction ratios of splitter are -16.7dB for TE and -15.7dB for TM. The responsivity and bandwidth are 0.42A/W and 6.51GHz respectively.
作者 康玉琢 毛陆虹 张世林 谢生
机构地区 天津大学
出处 《光通信技术》 CSCD 北大核心 2013年第8期1-4,共4页 Optical Communication Technology
关键词 定向耦合器 偏振分束器 锗光电探测器 全差分 光束传播法 Ge-on-SOI direction coupler polarization splitter Germanium photodetector fully differential BPM
分类号 TN491 [电子电信—微电子学与固体电子学]
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参考文献17

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光通信技术
2013年 第8期

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