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一种自主恢复的高可靠存储控制器设计 被引量:3

Design of an Automatic Recovery Memory Controller
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摘要 单粒子效应是星载计算机工作异常和故障的重要诱因之一,国内外多颗卫星遭受到单粒子效应的危害,已造成巨大的经济损失。提出了一种片上自主恢复存储控制器结构,将EDAC技术集成在片内存储器控制器中,通过EDAC电路检测片外存储器中的数据错误,再通过自动回写机制更新片外存储器,便能保持存储器中数据的正确性。与传统的星载计算机存储器系统设计方案相比,使处理器干预主存储器纠错的频度大幅减少。集成的片上存储控制器也减少了星载计算机系统设计的负担。 Reviewing some past research[1-4],we have come to believe that SEU(single event upset) is the main reason for fault or even failure of satellite-borne computer.This paper proposes a reliable memory controller that can write corrected data back into memory automatically.Figure 2 shows the state transition for the main finite state machine,which can enter an"error"state to correct the error if an error is detected during a data read cycle.A memory protection register is defined and the structure of the protection unit is shown in Figure 5.Figure 6 shows the reliable data path,which uses EDAC circuit to detect and correct errors.Figure 7 shows the automatic recovery flow while Figures 8,9 and 10 analyze the behavior of the memory controller when an error occurs and it is shown that single bit error in a data can be corrected and,after correction,written back into memory automatically.
出处 《西北工业大学学报》 EI CAS CSCD 北大核心 2013年第3期429-434,共6页 Journal of Northwestern Polytechnical University
基金 国家自然科学基金(61272122 61003037) 西北工业大学基础研究基金(JC201256)资助
关键词 可靠性 存储控制器 EDAC 自主恢复 controllers design error correction error detection flowcharting reliability automatic recovery EDAC memory controller
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参考文献9

  • 1侯睿,赵尚弘,胥杰,李勇军,吴继礼.高能带电粒子对卫星光通信系统的影响分析[J].光通信技术,2008,32(9):55-58. 被引量:3
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二级参考文献19

  • 1薛玉雄,曹洲,杨世宇.星载电子系统高能质子单粒子翻转率计算[J].航天器环境工程,2005,22(4):192-201. 被引量:6
  • 2杨生胜,牛小乐.光纤的总剂量效应分析研究[J].真空与低温,2005,11(3):154-158. 被引量:7
  • 3Hatayama T, Tanaka N, Fnyuki T, et al. Initial Stage for Heteroepitaxy of 3C-SiC on the Si(100) Surface in Dimethylgermance Source Molecular Beam Epitaxy. Applied Physics Letters, 1997, 70 ( 11 ) : 1411 - 1147.
  • 4Hofmann J, Veprek S, Heind J. Pseudomorphic Growth of Ultrathin Cubic 3C-SiC Films on Si (100) by Temperature Programmed Organometallic Chemical Vapor Deposition. Applied Physics Letters, 1999, 85 (5) : 2652 - 2656.
  • 5Benso A, Carlo S D, Natal G D. Static Analysis of SEU Effect on Software Application. ITC International Test Conference, 2002, 500 - 508.
  • 6Larry Longden, Chad Thibodeau, Robert Hillman. Designing A Single Board Computer for Space Using The Most Advanced Processor and Mitigation Technologies. http ://www. maxwell, corn ,2006.
  • 7Touloupis E, Flint J A, Chouliaras V A, Ward D D. A Tmr-Processor Architecture for Safety-Critical Automotive Applications, http: //www. lboro, ac. uk, 2006.
  • 8Hatayama T,Tanaka N,Fuyuki T,et al.Initial Stage for Heteroepitaxy of 3C-SiC on the Si(100) Surface in Dimethylgermance Source Molecular Beam Epitaxy.Applied Physics Letter,1997,70 (11):1411~1147.
  • 9Hofmann J,Veprek S,Heind J.Pseudomorphic Growth of Ultrathin Cubic 3C-SiC Films on Si(100) by Temperature Programmed Organometallic Chemical Vapor Deposition.Applied Physics Letter,1999,85 (5):2652~2656.
  • 10Benso A,Carlo S D,Natal G D.Static Analysis of SEU Effect on Software Application.ITC International Test Conference,2002.

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