摘要
合成了六个多氟代季成四芳醚类化合物,并且对部分化合物掺杂于SiO_2薄膜的介电性质进行了研究。当氟原子掺杂浓度(F/Si)为1％时,薄膜介电常数K值小于3。
Six tetrapolyfluoroaryl ethers and thioether of pentaerythntol have been synthesized by reaction of phenyl-sulfonate ester of pentaerythritol with the corresponding phenols or thiophenol. Some products have been found to be amenable to lower greatly the value of dielectric constant K to below 3 when doped to SiO2 films.
出处
《有机化学》
SCIE
CAS
CSCD
北大核心
2000年第5期787-789,共3页
Chinese Journal of Organic Chemistry
基金
教育部重点科技项目资助
关键词
多氟代季戊四芳醚
氟掺杂SiO2薄膜
合成
tetrapolyfluoroaryl ether of pentaerythritol, fluorine - doped SiO2 films, low dielectric constant
