摘要
以透明导电玻璃ITO和铜片为工作电极,用0.1mol/L乙酸铜和0.02mol/L乙酸钠的混合溶液作为电解液,通过两电极电化学沉积方法制备了Cu2O薄膜。讨论了pH值和沉积电位对Cu2O薄膜的影响,利用X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、X射线光电子能谱(XPS)对薄膜进行表征。结果表明,两电极电化学沉积法制备Cu2O薄膜最佳的pH值为5.7～5.9,沉积电位为1.1～1.3V。此外,分析了沉积电位对Cu2O薄膜形貌的影响。
Cuprous oxide（Cu2O） films were fabricated by a two-pole electrodeposited method using indium-doped tin oxide（ITO） covered glass substrate and Cu strip.The influence of some technological factors（pH value,deposition potential） on Cu2O films was studied.The as-synthesized products have been systematically characterized by X-ray diffraction（XRD）,scanning electron microscopy（SEM） and X-ray photoelectron spectroscope（XPS）.The results indicate that the pH value and the applied potential play important roles in the Cu2O films.The optimum technological conditions are obtained as follows： the pH value is 5.7-5.9 and the applied potential is 1.1-1.3V.What＇s more,in this paper,we also put emphasize on the forming reasons of morphology of Cu2O.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2013年第14期2056-2058,2061,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(61106060)
国家高技术研究发展计划(863计划)资助项目(2012AA052401)
中国科学院知识创新工程重大资助项目(Y2YF028001)
关键词
CU2O
薄膜
阴极电沉积
表征
cuprous oxide
electrodeposition
thin film
characterization
