摘要
用溶胶—凝胶法在 Pt/ Ti/ Si O2 / Si(1 0 0 )基底上制备 Pb1-x L ax Ti O3 (PLT,x<0 .2 )薄膜 ,研究薄膜的结构及其介电、铁电性能。在 60 0℃下退火 1小时的 PL T薄膜表现出单一的钙钛矿结构 ,(1 0 0 )择优取向明显。在室温下 PLT薄膜有典型的电滞回线。在 x<0 .2 (摩尔比 )的范围内 ,PLT薄膜相对介电常数则随着 La的增加而增加。
Pb 1-x La xTiO 3(PLT) thin films on Pt/Ti/SiO 2/Si(100) substrates were prepared by sol\|gel spin process. We investigated the crystal structure, dielectric properties of LPT thin films with respect to lamthanum doping concentration. The film annealed at 600℃ for 1 hour has the single perovskiet phase and preferential(100) orientation. The PLT films showed the typical hystere loops. Dielectric constant increased with increasing of La content for x<0 2.
出处
《材料科学与工程》
CSCD
2000年第3期84-86,共3页
Materials Science and Engineering
