摘要
提出了一种包括晶粒接种、高温退火、成核、生长四过程的薄膜沉积新方法 ,用射频等离子体增强热丝化学气相沉积系统 ,在Ni衬底上制备了定向金刚石膜。通过对成核和生长两过程工艺条件的研究 ,掌握了提高成核密度和金刚石定向生长规律。实验还表明 ,膜与Ni衬底之间未见Ni C
A novel four step technique has been successfully developed to grow oriented diamond film on nickel substrate in the radio frequency hot filament chemical vapor deposition system.The technique includes:?seeding the substrate with diamond powder;?annealing the substrate at high temperatures;?diamond nucleation and ? diamond growth.Research efforts were centered on enhancement of nucleation density and growth orientation control of diamond films by optimizing growth conditions.No Ni C H phase was observed at diamond/nickel interface.
出处
《真空科学与技术》
CSCD
北大核心
2000年第5期340-343,共4页
Vacuum Science and Technology
基金
浙江省自然科学基金资助项目!(5 96 0 30 )
关键词
四步沉积法
成核
生长
金刚石膜
镍衬底
Fourstep deposition process,Nucleation and growth,Diamond film
