摘要
A series of boron-doped polycrystalline diamond films were prepared by hot filament （HF） chemical vapor deposition on Nb substrates. The effects of B/C ratio of reaction gas on film morphology, growth rate, chemical bonding states, phase composition and electrochemical properties of each deposited sample were studied by scanning electron microscopy, Raman spectra, X-ray diffraction, microhardness indentation, and electrochemical analysis. Results show that the average grain size of diamond and the growth rate decrease with increasing the B/C ratio. The diamond films exhibit excellent adhesion under Vickers microhardness testing （9.8 N load）. The sample with 2% B/C ratio has a wider potential window and a lower background current as well as a faster redox reaction rate in H2SO4 solution and KFe（CN）6 redox system compared with other doping level electrodes.
采用热丝化学气相沉积法在铌基体上制备一系列硼掺杂金刚石薄膜电极,并通过扫描电子显微镜、激光拉曼光谱、X射线衍射、显微硬度和电化学分析等手段研究沉积所得样品中B/C比对薄膜的形貌、生长速率、化学键结构、物相组成和电化学性能的影响。结果表明:金刚石的平均晶粒尺寸和生长速率随着B/C比的增加而减小;金刚石薄膜在9.8N载荷下的维氏显微压痕测试中表现出优异的结合强度;相对于其他掺杂水平的样品,B/C比为2%的BDD电极具有更宽的电势窗口和更低的背景电流以及在H2SO4和KFe(CN)6溶液中更快的氧化还原反应速率。
基金
Project(21271188)supported by the National Natural Science Foundation of China
Project(2012M521541)supported by the China Postdoctoral Science Foundation,China
Project(2012QNZT002)supported by the Fundamental Research Funds for the Central Universities,China
Project(20110933K)supported by the State Key Laboratory of Powder Metallurgy,China
Project(CSUZC2013016)supported by the Open-End Fund for Valuable and Precision Instruments of Central South University,China
