摘要
提出了一种脉冲成形和脉冲展宽的方法,在基于理想开关的纳秒脉冲成形电路基础上,使用MOS管代替理想开关,保证MOS管工作在饱和区实现了脉冲成形,分析了MOS开关进入饱和区后在不改变传输线延迟时间的情况下,改变电源电压可以实现脉冲展宽,并通过实验验证了仿真获得的结果。
A method of pulse shaping and pulse broadening is proposed. Base on the nanosecond pulse shaping circuit of ideal switch, the MOS transistor is used to replace ideal switch, in order to ensure the MOS transistor operating in the saturation region and realize the pulse shaping. When the MOS switch is in saturation region, pulse broadening can be achieved with changing power supply voltage, but without changing the delay time of transmission line. The results are verified by experiments.
出处
《现代电子技术》
2013年第13期154-156,159,共4页
Modern Electronics Technique
基金
国家自然科学基金资助(61274048)
中国工程物理研究院横向项目
关键词
传输线
特征阻抗
拉普拉斯变换
时域
复频域
transmission line
characteristic impedance
Laplace transform
time domain
multiplex frequency domain
