摘要
对用射频磁控溅射法形成的单晶及多晶Al2 O3与Ni界面的化学状态进行研究 .离子减薄结合X射线光电子能谱方法原位对界面电子态研究表明 :未经过热处理的界面没有化学状态的变化 .Ni/Al2 O3(0 0 0 1 )界面经退火处理后界面处Ni有多种结合态存在 .N2 气保护下在 4 0 0℃和 80 0℃对Ni/Al2 O3(多晶 )样品保温 30min ,Ni,Al化学状态变化虽不明显 ,但高温 (80 0℃ )处理导致Ni向Al2 O3 基片内扩散 .
RF magnetron sputtering method was employed in the formation of Ni/Al 2O 3 interface including single crystalline and polycrystalline Al 2O 3. The as_received samples were kept under different heating conditions in N 2 atmosphere. The chemical states of Ni and Al in the depth of samples heat_treated were analyzed using XPS with Ar + ionic in_situ etching. The results show that the effects of the experimental conditions on the electronic structure of Ni/Al 2O 3 interface are that, for Ni/Al 2O 3(0001), Ni has several oxidation states including the spinal; for Ni/Al 2O 3(polycrystalline) interface, the changes are not obvious but the higher temperature ( e.g. 800 ℃) treatment results Ni diffusion into Al 2O 3 substrate.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2000年第5期441-444,453,共5页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金
国家"863"高技术新材料领域专家委员会资助项目!(592 91 0 0 5-0 2 )
关键词
镍
氧化铝
界面
化学状态
热处理
金属
陶瓷
nickel/alumina interface
chemical states
X-ray photoelectronic spectroscope
