摘要
在室温和不同功率下,用射频磁控溅射法在玻璃衬底上制备了CdS薄膜.运用探针式台阶仪、x射线衍射分析仪、紫外可见分光光度计、扫描电镜(SEM)等仪器对制备的CdS薄膜进行了表征分析.主要研究讨论了溅射功率对薄膜性质的影响.结果表明:制备的CdS薄膜为立方相和六方相的混合晶相,沿着六方(002)、(004)方向和立方(111)、(222)方向有着明显的择优取向;随着功率的增加,薄膜的厚度增加,晶粒的尺寸增大,光学吸收边红移.通过优化实验参数,在室温、0.6Pa、30W、纯氩气气氛条件下可以制备出结晶性能良好的CdS薄膜,禁带宽度为2.36eV.
The CdS films were deposited by Rf- magnetron sputtering on the 1 mm Na--Ga glass at room temperature. The structural and optical properties of the as-deposited films were investigated by XRD, UV/Vis spectroscopy and stylus profiler. And the effect of sputtering power on the characters of films was studied. The results show that the prepared CdS films was cubic and hexagonal mixed crystal phase. There was highly preferred orientation at （002）, （004） of hexagonal crystal phase and （111）, （222） of cubic crystal phase. The thickness and the grain are increased when the prepared powers are improved. The absorption edges of films are of red-shifted. The crystalline CdS thin films with 2.36 eV band gap are deposited at room temperature, 0.6Pa, 30W and pure Ar atmosphere conditions.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2013年第3期585-589,共5页
Journal of Sichuan University(Natural Science Edition)
基金
国家863课题(2011AA050519)
