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溅射气压对硼掺杂ZnO薄膜光电特性的影响 被引量:4

Effect of Sputtering Pressure on Optical and Electrical Properties of Boron-doped ZnO Thin Films
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摘要 采用脉冲磁控溅射系统在玻璃衬底上制备了ZnO∶B薄膜,利用霍尔测试仪和紫外-可见光-近红外分光光度计及逐点无约束最优化法,研究了溅射气压(0.1~3 Pa)对ZnO薄膜的光学和电学特性的影响。结果表明:ZnO∶B薄膜在可见光区域内的平均透光率高于80%,近红外波段的透过率及薄膜的电阻率与溅射气压成正比;折射率n随溅射气压降低呈下降趋势,其值介于1.92~2.09之间;在较低的溅射气压下(PAr=0.1 Pa)获得的薄膜电阻率最小(3.7×10-3Ω.cm),且对应着小的光学带隙(Eg=3.463 eV)。 ZnO∶ B thin films were deposited on glass substrate by pulsed magnetron sputtering at room temperature.Hall measurement,UV-Vis-NIR spectrometer and the Pointwise unconstrained optimization method were employed to investigate the effects of sputtering pressure on optical and electrical properties of ZnO∶ B thin films.The results showed that the average optical transmittance of ZnO∶ B thin films was over 80% in visible spectral region,while near-infrared transmittance and resistivity of the film were proportional to the sputtering pressure.The refractive index n has a declined trend as the sputtering pressure decreases,with values of n ranging from 1.92 to 2.09.The lowest resistivity was obtained at sputtering pressure of 0.1 Pa,corresponding to the small optical bandgap(Eg=3.463 eV).
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2013年第5期833-836,共4页 Journal of Synthetic Crystals
基金 国家自然科学基金云南联合基金(U1037604)资助课题
关键词 磁控溅射 ZnO∶B薄膜 溅射气压 透过率 电阻率 折射率 magnetron sputtering ZnO∶ B thin film sputtering pressure transmittance resistivity refractive index
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  • 1Minami T, Sato H, Nanto H, et al. Group Ⅲ Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering[J]. Jpn. J. Appl. Phys. , 1985,24 : L781.
  • 2Steinhauser J, Meyer D, Schwab M, et al. Humid Environment Sability of Low Pressure Chemical Vapor Deposited Boron Doped Zinc Oxide Used as Transparent Electrodes in Thin Film Silicon Solar Cells[J]. Thin Solid Films,2011,520( 1 ) :558.
  • 3Nakada T, Ohkubo Y, Murakami N, et al. Transparent Conducting Boron-Doped Zinc Oxide Films Deposited by DC-Magnetron Sputtering in B2H6-Ar Mixtures[ J ] . Jpn. J. Appl. Phys. ,1995,34:3623.
  • 4Abduev A K, Akhmedov A K, Asvarov A S. The Structural and Electrical Properties of Ca-doped ZnO and Ca, B-codoped ZnO Thin Films: The Effects of Additional Boron Impurity[ J]. Solar Energy Materials and Solar Cells ,2007,91 (4) :258.
  • 5Nomoto J, Miyata T, Minami T. Optical and Electrical Properties of Transparent Conducting B-doped ZnO Thin Films PrePA: ed by Various Deposition Methods[J]. J. Vat:. Sci. Technol. A,2011,29(4) :041504.
  • 6Hagiwara Y, Nakada T, Kunioka A. Improved Jsc in CIGS Thin Film Solar Cells Using a Transparent Conducting ZnO: B Window Layer[ J]. Solar Energy Materials and Solar Cells,2001,67 (1-4) :267.
  • 7Pawar B N, Cai G, Ham D, et al. Preparation of Transparent and Conducting Boron-doped ZnO Electrode for Its Application in Dye-sensitized Solar Cells[ J]. Solar Energy Materials and Solar Cells ,2009,93:524.
  • 8周继承,李莉.溅射气压对ZnO透明导电薄膜光电性能的影响[J].中国有色金属学报,2009,19(7):1278-1283. 被引量:7
  • 9Kim D K, Kim H B. Room Temperature Deposition of M-doped ZnO Thin Films on Glass by RF Magnetren Sputtering under Different Ar Gas Pressure[J]. Journal of Alloys and Compunds , 2011, 509 ( 2 ) :421.
  • 10Fay S, Steinhauser J, Nieolay S, et al. Polycrystalline ZnO: B Grown by LPCVD as TCO for Thin Film Silicon Solar Cells[J]. Thin Solid Films, 2010,$15 ( 11 ) :2961.

二级参考文献26

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同被引文献41

  • 1张志伟,李荣志,朱鹤孙.金刚石薄膜及高保真声学振动膜材料概述[J].材料研究学报,1994,8(4):330-336. 被引量:4
  • 2罗广南,谢致薇,郑健红,袁镇海,邓其森,戴达煌.金刚石和类金刚石膜研究及其在电声领域中的应用[J].功能材料,1995,26(5):417-420. 被引量:8
  • 3白秀琴,李健,严新平,赵春华.真空镀膜技术在塑料表面金属化上的应用[J].武汉理工大学学报(交通科学与工程版),2005,29(6):947-950. 被引量:32
  • 4徐艺滨,杜国同,刘维峰,杨天鹏,王新胜.ZnO:Al透明导电薄膜的制备及其特性分析[J].人工晶体学报,2006,35(3):569-572. 被引量:11
  • 5Chan H K, Sohn Y, Seog G J. Effects of an Additional Magnetic Field in ITO Thin Film Deposition by Magnetron Sputtering [ J 1. Ceramics International ,2015,41 ( 1 ) :617-621.
  • 6Zhang C, Chen X 1, Geng X h, et al. Temperature-dependent Growth and Properties of W-doped ZnO Thin films Deposited by Reactive Magnetron Sputtering[ J]. Applied Surface Science,2013,274:371-377.
  • 7Gao L, Zhang Y, Zhang J M, et al. Boron Doped ZnO Thin Films Fabricated by RF-magnetron Sputtering[ J ]. Applied Surface Science,2011,257 ( 7 ) : 2498-2502.
  • 8Huang Q, Wang Y, Wang S, et al. Transparent Conductive ZnO: B Films Deposited by Magnetron Sputtering [ J ]. Thin Solid Films,2012,520 ( 18 ) :5960-2964.
  • 9Yan C B, Chen X , Wang F, et al. Textured Surface ZnO: B/( hydrogenated Galliu-doped ZnO) and (Hydrogenated Gallium-doped ZnO)/ZnO : B Transparent Conductive Oxide Layers for Si-based Thin Film Solar Ceils[ J]. Thin Solid Films ,2012 ,$21:249-252.
  • 10Zhang C, Chen X 1, Geng X H, et al. Temperature-dependent Growth and Properties of W-doped ZnO thin Films Deposited by Reactive Magnetron Sputtering[ J]. Applied Surface Science ,2013,274:371-377.

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