摘要
以FTO玻片为基底,在不同pH值下采用恒电位电化学沉积法制备了Cu2O薄膜样品和Cu/Cu2O/Cu/FTO器件.通过XRD、SEM、EDS对样品的相组成、晶体结构、微观形貌和化学成分进行了表征和分析,并对Cu/Cu2O/Cu/FTO器件的电脉冲诱导电阻转变(EPIR)效应进行了测量.结果表明室温下Cu/Cu2O/Cu/FTO中存在明显的EPIR效应和忆阻器行为且与溶液酸碱性有关.在酸性和中性条件下,即pH=5、6、7时,Cu/Cu2O/Cu/FTO存在显著的EPIR效应,随着pH值的增加效应趋于减弱,当脉冲电压为6 V,脉冲宽度为0.001 s时,样品具有最大EPIR值.随pH进一步增加,在pH=8、9、10的碱性条件下,Cu/Cu2O/Cu/FTO的EPIR效应消失.
The cuprous oxide （Cu20） films and Cu/Cu20/Cu/FTO devices were electrochemically deposi ted on FTO substrates with different pH values and constant deposition potentials. The phase compositions, crystal structure ,microstructure and chemical components of CUE0 films were characterized and analyzed by XRD ,SEM and EDS methods. The Electric Pulse Induced Resistance（EPIR） switching effect of Cu/Cu20/Cu/FTO de vices was examined as well. The results show that EPIR effect and resistive memory characteristic exist clearly in Cu./CuEO/Ctt/FTO device at room temperature and relate to the pH values of the solution. In the acidic and neu tral condition, for example pH = 5,6,7, EPIR effect exists clearly in Cu/Cu20/Cu/FTO devices and tends to decrease as the pH value rises. Moreover, the most significant EPIR effect appears as the optimal pulse parame ters are 6 V for the pulse amplitude and 0. 001 s for the pulse width. As the pH value rises further in alkaline condition, for example pH = 8,9,10, EPIR effect disappears.
出处
《平顶山学院学报》
2013年第2期52-56,共5页
Journal of Pingdingshan University
