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热压烧结制备Sb_2Te_3热电材料的微结构研究 被引量:4

Microstructure of Sb_2Te_3 Thermoelectric Material Prepared by Hot Pressing
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摘要 采用石英管真空封装高纯度的Sb和Te粉末,在800℃熔炼12h,炉冷后研磨制备Sb2Te3粉末,真空热压烧结(480℃,20MPa,保温1h),制备出Sb2Te3块体材料。用XRD、SEM和EDS对材料的物相、形貌和成分进行表征。XRD分析表明,真空熔炼合成粉末和热压烧结块体材料的XRD图谱峰与Sb2Te3的标准衍射图谱相对应。Sb2Te3热压块体材料在平行于热压方向的断面上分布有大量层片状结构,层片厚度均小于1μm,在层片状结构之间均匀分布着短的片状结构。与热压方向垂直的断面上也是层片状结构,层片状较短且分布较均匀,层片厚度大多在1μm左右。材料中Sb和Te的原子百分数分别为38.2%、61.8%,接近2∶3的原子百分比。 Sb2Te3 powders fabricated by grinding after high pure Sb and Te sealed in a vacuum quartz tube were smelted at 800 ℃ for 12 h. Sb2Te3 bulk materials were prepared by hot-press sintering at 480 ℃ under 20 MPa for lh in vacuum. The phase structure, microscopic topography and composition of the samples were characterized by XRD, SEM and EDS. XRD shows that the diffraction peaks of powders alloyed in vacuum and bulk materials by hot-press sintering mainly corresponds to the standard Sb2Te3 reference code (01-071-0393). The SEM images illustrate that the bulk samples of Sb2Te3 by hot-press sintering have a plenty of sheet layer structures on the cross section paralleling to the hot-press direction. The thickness of sheet layer is below 1 μm. But the short sheet structures uniformly distribute between long and thin sheet layer structures. On the cross section perpendicular to the hot-press direction, the sheet layer structures are shorter, which is about 1μm in thickness, and more evenly distribute. The atomic percentage of the elements Sb and Te is 38.8% and 61.8%, respectively, approaching to 2 : 3.
出处 《热加工工艺》 CSCD 北大核心 2013年第10期42-44,共3页 Hot Working Technology
基金 国家自然科学基金资助项目(51161009)
关键词 真空熔炼 热压烧结 Sb2Te3 热电材料 微观结构 vacuum melting hot-pressing Sb2Te3 thermo-electric materials microstructure
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参考文献11

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