摘要
Ⅱ-Ⅵ族材料ZnSe、CdSe、ZnTe、CdTe等具有禁带宽度大,少子寿命对位错不敏感等优点,可以作为一种新的材料体系应用于叠层太阳能电池中。此类材料既能够与铜铟镓硒电池、Ⅲ-Ⅴ族材料、单晶Si等相结合,也可将不同的Ⅱ-Ⅵ族材料相结合制备多结电池。本文介绍了上述几种思路的理论及实验研究现状,以及Ⅱ-Ⅵ族材料顶电池的研究进展;同时分析了阻碍Ⅱ-Ⅵ族半导体材料应用的单极性掺杂问题,介绍了提高掺杂水平可能的途径。
The latest progress in fabrication of tandem solar cells with the advanced materials,the Ⅱ-Ⅵ compound materials,including ZnSe,CdSe,ZnTe,and CdTe,was tentatively reviewed in a thought provoking way.Their technological attractions include the wide band-gap and little impact of the dislocations on the minority carrier lifetime.The Ⅱ-Ⅵ compound materials can be combined with the conventional solar cell and materials,including Cu-In-Ga-Se solar cells,Ⅲ-Ⅴ materials,and Si wafers;and different Ⅱ-Ⅵ materials can be integrated to fabricate tandem solar cells.The recent development in the theoretical and experimental studies,such as fabrication of the Ⅱ-Ⅵ material top cell,doping limitations in Ⅱ-Ⅵ unipolar semiconductors and its possible solutions,etc,were also briefly discussed.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2013年第3期271-276,共6页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金资助项目(60876004)
北京市自然科学基金资助项目(2123065)