摘要
本文借助Comsol和Matlab软件模拟了直流磁控溅射圆平面靶系统的磁场分布和荷电粒子分布,对不同磁场强度和阴极电压条件下的荷电粒子分布进行了模拟分析,通过比较靶面离子流密度分布曲线发现:当磁场强度增强时,靶面离子流密度分布曲线会变得更加陡窄;当阴极电压变化时,靶面离子流密度分布曲线几乎没有变化。说明靶材的刻蚀形貌会随磁场强度增强而变窄,而阴极电压变化对靶材的刻蚀形貌没有影响。上述结论对直流磁控溅射工艺参数优化具有一定的理论指导意义。
The magnetic field and charged particles distribution of the circular target model in DC magnetron sputtering was simulated using the Comsol and Matlab sofwaresl The distribution of charged particles under the conditions of different magnetic field strength and different cathode voltage were also studied. By comparing the curves of ion flux density distribution, it＇s shown that the curve will become narrow with the enhancement of the magnetic field and almost not change with the variation of cathode voltage. It means that the target etching morphology will become narrow with the enhancement of the magnetic field, which is independent of the cathode voltage. A guidance for process parameter optimization in DC magnetron sputtering is thus provided.
出处
《真空》
CAS
2013年第3期70-73,共4页
Vacuum
关键词
直流磁控溅射
刻蚀形貌
模拟
圆平面靶
磁场强度
阴极电压
DC magnetron sputtering
etching morphology
simulation
circular target model
magnetic field strength
cathode voltage
