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手持激光测距仪及其发射电路 被引量:8

Handheld laser rangefinder and its transmitter circuit
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摘要 脉冲相位激光测距法是当前手持激光测距仪采用的一种新型测距方法,针对这种测距方法,设计了一种简易的产生测距激光信号的电路方案,其中包含频率合成方案、激光调制电路,并分析了设计对于测距的范围、精度、周期、能耗的影响,指出了提高测距指标的关键所在。另外,通过跨导运放的使能端实现了间歇发射激光脉冲串的目标,提高了发射激光的峰值功率,这有利于增加测距范围。电路设计方案简易,对手持激光测距技术研究有一定的参考意义。 A simple LD laser drive circuit was designed for pulse phase laser rangefinder, which contains the frequency synthesizer and the laser modulation circuit. This paper analyzes the effect of the circuit on the ranging range, accuracy, cycle and energy consumption, and illustrates the key points to improve laser ranging performance. Intermittent burst emission was achieved by enabling and disabling the operational transeondnctance amplifiers(OTA). This intermittent burst emission heightens the laser peak power, which can enhance the measurement range. This circuit design is simple and feasible, and has eeretain reference value for the handheld laser rangefinder developing.
出处 《激光与红外》 CAS CSCD 北大核心 2013年第5期532-535,共4页 Laser & Infrared
关键词 脉冲相位激光测距 间歇发射 频率合成 pulse-phase laser range finding burst emission frequency synthesizer
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  • 1冯传岗.论半导体激光器及调制技术[J].有线电视技术,2004,11(20):71-74. 被引量:3
  • 2张志勇,张靖,朱大勇.一种基于相位测量的激光测距方法[J].光电工程,2006,33(8):75-78. 被引量:15
  • 3Lau K Y, Amnon Y. Ultra-high speed semiconductor lasers [ J ]. IEEE Journal of Quantum Electronics, 1985, 21 (2) :121-138.
  • 4Lau K Y, Bar C N, Ury I, et al. An 11 GHz direct modulation bandwidth GaA1As window laser on semi-insulating substrate operating at room temperature [ J ]. Applied Phys- ics Letter, 1984, 45:316-318.
  • 5Su C B, Lanzisera V, Olshansky R, et al. 15 GHz direct modulation bandwidth of vapour phase regrown 1.3 μm In- GaAsP buried heterostructure lasers under CW operation at room temperature[J]. Electronics Letter, 1985, 21 (13) : 577-579.
  • 6Han H, Freeman N, Hobson W S, et al. High speed mod- ulation of strain compensated InGaAs-GaAsP-lnGaP multi- ple quantum well lasers [ J ]. IEEE Photonics Technology Letter, 1996, 8(9):1133-1135.
  • 7Matsui Y, Murai H, Arahira S, et al. 30 GHz bandwidth 1.55 tLm strain compensated InGaA1As-InGaAsP MQW la- sers[J]. IEEE Photonics Technology Letter, 1997, 9( 1 ) : 25 -27.
  • 8Yasuhiro M, Hitoshi M, Shin A, et al. Enhanced modula- tion bandwidth for strained compensated InGaAIAs-In- GaAsP MQW lasers [ J ]. IEEE Journal of Quantum Elec- tronics, 1998, 34(10) : 1970-1978.
  • 9Suemune I, Coldren L A, Yamanishi M, et al. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser[ J]. Applied Physics Letter, 1988, 53 : 1378-1380.
  • 10Yasuhiro M, Hitoshi M, Shin A, et al. Novel design scheme for high speed MQW lasers with enhanced differen- tial gain and reduced carrier transport effect [ J ]. IEEE Journal of Quantum Electronics, 1998, 34 (12): 2340-2349.

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