摘要
先利用有限差分频域法研究了增透膜、Ag底面反射镜对不同厚度超薄晶硅电池光吸收谱的影响,得到最佳的超薄晶硅电池厚度为10～20μm的结论。然后,针对厚度为12μm的超薄晶硅电池陷光结构进行了理论优化,得到了增强因子大于2.25的一维光子晶体上表面织构结构。最后,对该电池结构的光生电流密度和倾斜入射光的接收角进行了计算,结果表明:最优的陷光结构可使12μm的超薄晶硅电池的最大光生电流密度达33 mA/cm2以上,且在入射角为-60°≤θ≤60°的范围内,该电池均能保持较大的光生电流密度。
The influences of antireflective coatings and Ag back reflectors on the light absorption spectrum of ultrathin c-Si solar ceils with different wafer thicknesses were analyzed by finite difference frequency domain method and the optimal thickness range of ultrathin c-Si solar cells between 10-20 μm is obtained. Then, the light trapping scheme of ultrathin c-Si solar ceils with a thickness of 12 μm is optimized and an optimal surface texture structure of one dimensional photonic crystal, which can enhance light absorption by a factor of 2.25. Finally, by caculating the photocurrent density and the acceptance angle of the optimal cell, it was proved that the cell structure have a good performance with a maximum photocurrent density of 33 mA/cm2 and a acceptance angle of - 60° to 60°.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第4期630-634,共5页
Journal of Synthetic Crystals
基金
教育部新世纪优秀人才支持计划项目(NCET-11-1005)
2011年辽宁省第一批次科学计划项目(2011402001)
辽宁省自然科学基金(201102005)
辽宁省教育厅一般项目(L2012401)
辽宁省百千万人才资助项目(2012921061)
辽宁省高等学校优秀人才支持计划(LR201002)
关键词
太阳电池
晶硅材料
陷光结构
光子晶体
solar cell
crystalline silicon materials
light trapping structure
photonic crystal
