摘要
两温区气相输运法合成ZnGeP2多晶过程中,易生成一些高熔点的杂质,导致合成材料的纯度较低。选取ZnGeP2多晶合成过程中几个重要温度的合成产物,进行X射线衍射(XRD)和能谱色散分析(EDS),结果表明:ZnGeP2多晶合成过程的中间生成物主要为Zn3P2、ZnP2和GeP等。根据分析结果,对合成工艺进行了改进,合成出外观完整、内部致密的ZnGeP2多晶锭。用XRD进行分析,结果表明:改进工艺后合成的是高纯单相ZnGeP2多晶材料,为高质量单晶体生长奠定了可靠基础。
The formation of high melting point impurities occur dtLring the synthesis of ZnGeP2 using two-zone vapor transport method, thus resulting in the reduction of the purity of polycrystals. Synthetic products at several important temperatures in the synthesis process of ZnGeP2 polycrystals were characterized by XRD and EDS analysis. The results showed that the major intermediates are Zn3P2, ZnP2, and GeP. Improvements were made to the synthesis process based on these results, and integral, dense ZnGeP2 polycrystals were synthesized. XRD analysis indicated that high-purity, single-phase ZnGeP2 polycrystalline materials can be obtained after the improvements and it has laid a reliable foundation for the single crystal growth.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第4期558-562,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金重点项目(50732005)
高等学校博士学科点专项科研基金资助课题(20090181120001)
