摘要
半导体激光器以其突出的优点具有广泛的应用前景,但受光束质量限制,使其很难作为直接光源应用在对功率和光束质量均有较高要求的领域。采用斜45°柱透镜阵列光束整形技术、自偏振合束技术和三波长合束技术,将3种波长的8个半导体激光阵列合束,研制出一种连续功率为500 W、电光转换效率为39.5%、光参量积为12.44mm.mrad、亮度为42.8MW/(cm2.sr)的半导体激光光源,可作为直接光源应用于工业和国防等领域。
Because of the prominent advantages, diode lasers have a significant prospect of application. But limited by the beam quality, it is difficult to be a direct source applied in the fields demanding for power, beam quality and brightness at the same time. The technologies of beam shaping of 45° tilted cylindrical lens, self-polarization multiplexing and three-wavelength multiplexing are employed to couple 8 bars with three wavelengths into a laser beam, and a diode laser source is developed with continuous wave （CW） power of 500 W, electro-optical conversion efficiency of 39.5 %, holistic beam quality of 12.44 mm.mrad and brightness of 42.8 MW/（cm2 ·sr）, which can be applied directly in the fields of materials processing and defense.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2013年第4期60-65,共6页
Chinese Journal of Lasers
基金
国家863计划(2012AA040210)
吉林省科技厅发展计划项目(20112106)
院地合作项目(2011CJT0003)资助课题
关键词
激光器
高亮度
光束整形
自偏振合束
波长合束
lasers
high brightness
beam shaping
self-polarization multiplexing
wavelength multiplexing
