摘要
利用表面光伏法(SPV)研究了半绝缘GaAs(SI-GaAs)的缺陷态.通过加直流光偏置测量了室温下带边以下的光伏响应,发现带隙内缺陷态的光伏响应主要是由于表面复合而在样品表面形成载流子浓度梯度引起的,通过实验表明SPV是一种对SI-GaAs晶片表面质量进行检测的非常灵敏的无损检测方法.
The surface photovoltage (SPV) effect induced by the defect states in semi insulating (SI) GaAs was studied. The PV response below the band edge was measured at room temperature with a dc optical biasing. The spectra were found to be strongly dependent on the surface recombination and were attributed to formation of the carrier concentration gradient near the surface region, showing that SPV is a very sensitive and nondestructive technique for characterizing the surface quality of the SI GaAs wafers.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第1期15-18,共4页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金!(编号 :698760 37)
关键词
表面光伏谱
无损检测
砷化镓
半导体
surface photovoltaic spectroscopy, SI GaAs,nondetructive technique.
