摘要
采用直流反应磁控溅射法制备了TaN薄膜，研究了薄膜厚度对TaN薄膜微观结构及电性能的影响。结果表明，薄膜厚度对TaN薄膜的表面形貌和相结构都没有影响，但会显著影响TaN薄膜的电学性能。在87～424nm的范围内，随着薄膜厚度的增大，所制TaN薄膜的电阻率从555×10^-6Q·cm减小到285×10^-6Q·cm，方阻从84刚口减小到9Ω/□，电阻温度系数（TCR）从120×10^-6／℃增加到＋50×10^-6／℃。可以通过调节薄膜的厚度调节TaN薄膜的电阻率和TCR。
TaN thin films were deposited by DC reactive magnetron sputtering. The influences of thin films thickness on the microstructures and the electrical properties of the samples were investigated in detail. The results show that the thickness does not influence the surface morphology and phase structure of the TaN thin films. However, the thickness of the films can influence the electrical properties observably. With the film thickness increasing from 87 nm to 424 nm, the resistivity and the sheet resistance of the samples deacrease from 555×10^-6Q·cm .cm to 285×10^-6Q·cm and from 84 Ω/□to 9 Ω/□, respectively; the TCR increases from -120×10^-6/℃ to ＋50×10^-6/℃. This fact implies that the resistivity and the TCR of the TaN thin films can be adjusted by adjusting the film thickness.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2013年第5期20-22,共3页
Electronic Components And Materials
基金
四川省科技创新研究团队项目(No.2011JTD0039)
关键词
TaN薄膜
直流反应磁控溅射
厚度
TCR
电阻率
方阻
TaN thin films
DC reactive magnetron sputtering
thickness
TCR
resistivity
sheet resistance
