摘要
利用溶胶-凝胶法在石英玻璃衬底上制备Sn掺杂ZnO薄膜(ZnO:Sn),研究了不同Sn掺杂量对薄膜结晶性、表面形貌和光电特性的影响。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见光光度计(UV-VIS)和四探针测试仪对ZnO:Sn薄膜进行表征,结果表明:Sn掺杂2at.%时,薄膜具有良好的c轴择优取向,表面簇拥生长并呈现六角形结构,薄膜的平均透光率大约为90%,电阻率最小仅为19.6Ω.cm。
Transparent thin films of Sn-doped ZnO （ZnO.Sn） were deposited onto silica glass substrates by the sol gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO： Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO.Sn thin films in this paper, Sn-doped with 2at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high- preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 cm.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2013年第4期25-27,34,共4页
China Ceramics
