摘要
报道了８０８ｎｍ无铝ＩｎＧａＡｓＰ／ＧａＡｓ高功率准连续阵列半导体激光器．在频率１０００Ｈｚ，脉冲宽度２００μｓ，占空比达２０％时，单阵列条的输出光功率室温下达到３７Ｗ．
808nm high power semiconductor laser was widely used to pump Nd: YAG laser.Here we report the quasi-continuous wave (QCW) operation of 808urn Al-free InGaAsP/GaAs high-power 1-cm-wide laser array bar. The active layer structure we usedhere was the separate confine heterostructure (SCH) single quantum well. An outputpower of 37W with frequeney of 1000Hi, pulse width of 200μs and duty-cycle of 20%was achieved at room temperature when driven by excitation current of 49A, which wasthe upper limit of our driving source. The slope efficiency of the bar was 1. 03W/A.The power efficiency was estimated to be about 39%.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1999年第4期342-345,共4页
Chinese Journal of Luminescence
基金
国家863高技术基金
关键词
准连续
阵列
半导体激光器
占空比
quasi-continuous wave
array
semiconductor laser
duty cycle
