摘要
在Ｙｂ：ＹＡＧ晶体中发现浓度猝灭现象，对猝灭机制进行了分析研究．指出退火前晶体的荧光浓度猝灭现象主要由Ｙｂ２＋、色心和由此产生的晶格畸变所致；高掺杂浓度时痕量稀土杂质离子的存在也将导致浓度猝灭．确定了Ｙｂ：ＹＡＧ晶体中Ｙｂ３＋的理想掺杂浓度．
The concentration quenching on active ions in laser crystals has effects on theiroptical and laser properties, so it is necessary to study. Recently, Yb3+ doped solid- state materials are attractively used as gain media of high efficiency, high power laserwith the development of InGaAs laser diode. Among the numerous Yb3+ doped crystals,Yb: YAG has exhibited enormous potential for high efficiency and high power lasersbecause of its excellent optical and spectroscopic performances, high thermal conductivity and tensile strength. Since Yb3+ possesses only two relevant electronic states--the2F7/2, ground state and 2F5/2 excited-separated by about 10, 000cm-1, the concentrationquenching is nonexistent in Yb: YAG in principle. However, the measurements onfluorescence lifetimes of unannealing Yb: YAG with different doping level demonstrated that there were concentration quenching in Yb: YAG crystal for Yb3+doping concen-tration of more than 10at. %. This phenomenon was studied, and the decrease of fluorescence lifetime is attributed to Yb2+, which results in color center and lattice distortion of Yb: YAG. Trace impurity ions such as Er3+ and Tin3+ are detected by means ofICP and X-ray excited emission spectrum, which are also responsible for the concentration quenching at high Yb3+ doping level. The optimal Yb3+ doping level in Yb: YAGcrystal is less than 20at. %, which is determined by the fluorescence lifetime measurement.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1999年第4期325-329,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金!69578026
国家高科技863-416-2基金
关键词
YB:YAG晶体
浓度猝灭
荧光寿命
掺杂
激光材料
Yb: YAG crystal
concentration quenching
fluorescence lifetime
dopingConcentration
