摘要
用熔融急冷法制备了系列Tm3+掺杂浓度的Ge-Ga-Se-CsI硫卤玻璃样品,通过测试的吸收光谱和Judd-Ofelt理论计算了Tm3+离子的强度参数(Ωi,i=2,4,6)、自发辐射跃迁几率(A)、荧光分支比(β)、以及辐射寿命(τrad)等光谱参数。研究了800 nm激光泵浦下样品红外荧光特性与掺杂浓度之间的关系,计算了常温下Tm3+:3F4→3H6(1.8μm)和3H5→3F4(3.8μm)发射截面以及3F4→3H6(1.8μm)跃迁的增益截面与波长的函数关系。
A serial of chalcohide glasses based on Ge-Ga-Se-CsI system doped with the different Tm3＋ ions were synthesized by melt-quenching technique. Raman spectra, absorption spectra, near- and mid- infrared fluorescence of glass samples were measured. The intensity parameters （Ωi, i = 2,4,6 ）, transition probabilities （A）, branching Tm3＋ ions in samples by using the ratios （β） and radiative lifetimes （τrad） have been predicted for Judd-Ofeh theory. The infrared fluorescence properties were investigated with the different Tm3＋ ion concentration under 800 nm laser excitation. According to McCumber theory, the absorption and stimulated emission cross-sections corresponding to the （ 1.8 μm） and ^3H5→^3F4 （3.8 μm） transitions of Tm3＋. The respective gain cross section spectra（ 1.8 μm） were also computed as a function of population inversion according to absorption and emission cross- sections and the ion concentrations.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2013年第3期461-466,共6页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金资助课题(No.61008041)
江西省教育厅科技项目基金资助课题(GJJ12240)
