摘要
文中介绍了驱动电流、驱动功耗的计算方法;分析了MOSFET开关过程中电流电压的变化规律;最后对常用的驱动电路解决方案及其优缺点、设计中需要注意的问题等进行了分析总结。根据MOSFET门级驱动电路的特点及设计过程中需要考虑的影响因素,为可靠、高性能的MOSFET应用设计提供参考。
The article introduced the calculation method of the drive current and the driver power dissipation; analyzed the variation of the current and voltage in the MOSFET switching proeess; finally, summarized the common drive circuit solutions and their advantages and disadvantages and design considerations; provided a reference for reliable, high-perform- ance MOSFET application design based on the characteristics of MOSFET gate drive circuit and need to consider the impact of factors in process of design.
出处
《通信电源技术》
2013年第2期34-37,共4页
Telecom Power Technology
